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MUR1680ISC 数据表(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

部件名 MUR1680ISC
功能描述  16.0 Ampere Heatsink Electrically Isolated Series Connection Ultra Fast Recovery Rectifiers
PDF  2 Pages
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制造商  THINKISEMI [Thinki Semiconductor Co., Ltd.]
网页  http://www.thinkisemi.com
标志 THINKISEMI - Thinki Semiconductor Co., Ltd.

MUR1680ISC 数据表(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

  MUR1680ISC Datasheet HTML 1Page - Thinki Semiconductor Co., Ltd. MUR1680ISC Datasheet HTML 2Page - Thinki Semiconductor Co., Ltd.  
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Features
TO-220AB/TO-220-3L
Unit:inch(mm)
ThinkiSemi latest&matured process FRED
Low forward voltage drop
High current capability
Low reverse leakage current
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
Car Audio Amplifiers and Sound Device Systems
Plating Power Supply,Motor Control,UPS and SMPS etc.
Mechanical Data
Case: Heatsink open metal TO-220AB/TO-220-3L package
Epoxy: UL 94V-0rateflame retardant
Epoxy: UL 94V 0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
MUR1620ISC thru MUR16120ISC
Pb Free Plating Product
MUR1620ISC thru MUR16120ISC
Pb
16.0 Ampere Heatsink Electrically Isolated Series Connection Ultra Fast Recovery Rectifiers
Positive
Negative
Insulated Common Cathode
Insulated Common Anode
Doubler
Insulated Doubler Polarity
Series
Insulated Series Connection
Suffix "ICA"
Suffix "IDP"
Suffix "ISC"
Suffix "ICC"
.196(5.00)
.054(1.39)
.038(0.96)
.419(10.66)
.139(3.55)
MIN
.163(4.16)
.045(1.15)
.019(0.50)
.025(0.65)MAX
.1(2.54)
.1(2.54)
.387(9.85)
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/2
Rev.14T
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
UNIT
VRRM
200
400
600
800
1000
1200
V
VRMS
140
280
420
560
700
840
V
VDC
200
400
600
800
1000
1200
V
IF(AV)
A
IFSM
A
VF
(Typical)
0.85-0.95
1.00-1.25
1.25-1.50
V
IR
μA
μA
Trr
nS
CJ
pF
RθJC
/W
TJ,TSTG
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Note:(3)Thermal Resistance junction to case.
Typical Junction Capacitance (Note 2)
80
Typical Thermal Resistance (Note 3)
1.5
Operating Junction and Storage
Temperature Range
-55 to +175
Maximum Reverse Recovery Time (Note1)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125℃
(Total Device 2x8.0A=16.0A)
16.0
Peak Forward Surge Current, 8.3ms single Half
sine-wave superimposed on rated load (JEDEC
method)(Per Diode/Per Leg)
160
Maximum Instantaneous Forward Voltage
@8.0A(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25℃
At Rated DC Blocking Voltage @TJ=125℃
1.0
100
1.50-1.70
25-50
50-75
MUR1620ISC
MUR1640ISC
MUR1660ISC
MUR1680ISC
MUR16100ISC
MUR16120ISC
Internal ceramic(alumina) insulated package
Heat-sink(copper base plate)
N/C(None Collect)


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