MTP2P50E datasheet(1/2 Pages) ISC

部件名	MTP2P50E

功能描述	P-Channel MOSFET Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

ISF1143

eq MTP2P50E

P-Channel MOSFET Transistor

www.iscsemi.com

1

FEATURES

· Drain Current -ID= -2.0A@ TC=25℃

· Drain Source Voltage -VDSS= -500V(Min)

· Static Drain-Source On-Resistance

-RDS(on) = 6Ω(Max)@VGS= -10V

· Fast-recovery body diode

APPLICATIONS

· Bridge circuits

· Power Stitching

Absolute Maximum Ratings(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

-500

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

-2

A

IDM

Drain Current-Single Pulse

(tp ≤ 10 µs)

-6

A

PD

Total Dissipation @TC=25℃

75

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to

Case

1.67

℃

/W

3

2

1

TO-220C Package

类似零件编号 - MTP2P50E

制造商	部件名	数据表	功能描述
Motorola, Inc	MTP2P50E	230Kb / 8P	TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
ON Semiconductor	MTP2P50E	103Kb / 8P	Power MOSFET 2 Amps, 500 Volts November, 2000 ??Rev. 3
	MTP2P50EG	193Kb / 7P	Power MOSFET 2 Amps, 500 Volts May, 2010 ??Rev. 6
	MTP2P50E	193Kb / 7P	Power MOSFET 2 Amps, 500 Volts May, 2010 ??Rev. 6

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