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STW9N150 数据表(PDF) 2 Page - STMicroelectronics |
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STW9N150 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 9 page ![]() Electrical ratings STW9N150 2/9 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 1500 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 8 A ID Drain current (continuous) at TC = 100°C 5 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 32 A PTOT Total dissipation at TC = 25°C 350 W Derating factor 0.37 W/°C Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 0.36 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Tbd A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50V) Tbd mJ |
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