PJS6602

January 20,2022

PJS6602-REV.02

Page 1

20V Complementary Enhancement Mode MOSFET

Voltage

20 / -20V

Current

5.2 /-3.4A

SOT-23 6L

Unit: inch(mm)

Features

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case: SOT-23 6L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0005 ounces, 0.014 grams

 Marking: SC2

PARAMETER

SYMBOL

N-Ch LIMIT

P-Ch LIMIT

UNITS

Drain-Source Voltage

VDS

20

-20

V

Gate-Source Voltage

VGS

+12

+12

V

Continuous Drain Current

ID

5.2

-3.4

A

Pulsed Drain Current(Note 4)

IDM

20.8

-13.6

A

Power Dissipation

Ta=25oC

PD

1.25

W

Derate above 25oC

10

mW/ oC

Operating Junction and Storage Temperature Range

TJ,TSTG

-55~150

oC

Typical Thermal Resistance

-

Junction to Ambient(Note 3)

RθJA

100

oC/W

Maximum Ratings and Thermal Characteristics (TA=25

o

C unless otherwise noted)