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SCT1255Z 数据表(PDF) 4 Page - SMC Diode Solutions Co. LTD |
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SCT1255Z 数据表(HTML) 4 Page - SMC Diode Solutions Co. LTD |
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4 / 5 page ![]() Technical Data Data Sheet N2144, Rev.- China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com SCT1255Z SCT1255SJ FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature IT(RMS) (A) P(w) 0 11 22 33 44 55 0 IT(RMS) (A) Tc (℃) 0 0 25 50 75 100 125 44 55 66 20 40 60 80 11 22 33 TO-247J α=180° TO-3P(lns) FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values) 1 10 100 1000 Number of cycles 0 100 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 1 10 Tj=25℃ 200 300 400 500 600 700 600 100 Tj=Tjmax One cycle tp=10ms FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 150A/ μs) tp(ms) 0.01 0.1 1 10 10 ITSM (A), I t (A s) -40 -20 0 20 40 60 80 100 120 140 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.5 2.0 3.0 2 2 2 1.0 2.5 Tj(℃) 1000 6000 100 dI/dt ITSM I t2 IH&IL IGT Ratings and Characteristics Curves |
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