PJS6601

January 20,2022

PJS6601-REV.02

Page 3

P-Channel Electrical Characteristics (TA=25

o

C unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250uA

-20

-

-

V

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-0.4

-0.71

-1.2

V

Drain-Source On-State Resistance

RDS(on)

VGS=-4.5V, ID=-3.1A

-

84

100

m

Ω

VGS=-2.5V, ID=-2.0A

-

104

135

VGS=-1.8V, ID=-1.1A

-

134

190

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-

-

-1

uA

Gate-Source Leakage Current

IGSS

VGS=+12V, VDS=0V

-

-

+100

nA

Dynamic(Note 5)

Total Gate Charge

Qg

VDS=-10V, ID=-3.1A,

VGS=-4.5V(Note 1,2)

-

5.4

-

nC

Gate-Source Charge

Qgs

-

0.7

-

Gate-Drain Charge

Qgd

-

1.3

-

Input Capacitance

Ciss

VDS=-10V, VGS=0V,

f=1.0MHZ

-

416

-

pF

Output Capacitance

Coss

-

43

-

Reverse Transfer Capacitance

Crss

-

32

-

Turn-On Delay Time

td(on)

VDD=-10V, ID=-3.1A,

VGS=-4.5V,

RG=6

Ω(Note 1,2)

-

4

-

ns

Turn-On Rise Time

tr

-

27

-

Turn-Off Delay Time

td(off)

-

78

-

Turn-Off Fall Time

tf

-

45

-

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

IS

---

-

-

-1.5

A

Diode Forward Voltage

VSD

IS=-1.0A, VGS=0V

-

-0.8

-1.2

V

NOTES :

1.

Pulse width<300us, Duty cycle<2%

2.

Essentially independent of operating temperature typical characteristics.

3.

RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper.

4.

The maximum current rating is package limited.

5.

Guaranteed by design, not subject to production testing.