M29F800DB datasheet(6/53 Pages) STMICROELECTRONICS

6 / 53 page

Summary description

M29F800DT

6/53

Summary description

The M29F800D is a 8 Mbit (1Mb x8 or 512Kb x16) non-volatile memory that can be read,

erased and reprogrammed. These operations can be performed using a single low voltage

(5V) supply. On power-up the memory defaults to its Read mode where it can be read in the

same way as a ROM or EPROM.

The memory is divided into blocks that can be erased independently so it is possible to

preserve valid data while old data is erased. Each block can be protected independently to

prevent accidental Program or Erase commands from modifying the memory. Program and

Erase commands are written to the Command Interface of the memory. An on-chip

Program/Erase Controller simplifies the process of programming or erasing the memory by

taking care of all of the special operations that are required to update the memory contents.

The end of a program or erase operation can be detected and any error conditions

identified. The command set required to control the memory is consistent with JEDEC

standards.

The blocks in the memory are asymmetrically arranged, see Figure 4: Block addresses (x8),

and Figure 5: Block addresses (x16). The first or last 64 Kbytes have been divided into four

additional blocks. The 16 Kbyte Boot Block can be used for small initialization code to start

the microprocessor, the two 8 Kbyte Parameter Blocks can be used for parameter storage

and the remaining 32K is a small Main Block where the application may be stored.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the

memory. They allow simple connection to most microprocessors, often without additional

logic.

The memory is offered in SO44 and TSOP48 (12 x 20mm) packages. The memory is

supplied with all the bits erased (set to ’1’).

M29F800DB 数据表(PDF) 6 Page - STMicroelectronics