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MJD13003 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJD13003 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor MJD13003 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 400 -- -- V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 0.1A -- -- 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.25 A TC= 100℃ -- -- 1.0 1.0 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.5A -- -- 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 0.5 A ;IB= 0.1A -- -- 1.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 1A ;IB= 0.25 A TC= 100℃ -- -- 1.2 1.1 V ICBO Collector Cutoff Current VCB= 700V;IE= 0 TC= 100℃ -- -- 1 5 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 -- -- 1 mA hFE-1 DC Current Gain IC= 0.5 A; VCE= 2V 8 -- 40 hFE-2 DC Current Gain IC= 1A; VCE= 2V 5 -- 25 HFE-1 Classifications A B C D E F 8-16 15-21 20-26 25-31 30-36 35-40 |
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