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MA4PBL027 数据表(PDF) 2 Page - Tyco Electronics

部件名 MA4PBL027
功能描述  HMICTM Silicon Beam-Lead PIN Diodes
PDF  5 Pages
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制造商  MACOM [Tyco Electronics]
网页  http://www.macom.com
标志 MACOM - Tyco Electronics

MA4PBL027 数据表(HTML) 2 Page - Tyco Electronics

  MA4PBL027 Datasheet HTML 1Page - Tyco Electronics MA4PBL027 Datasheet HTML 2Page - Tyco Electronics MA4PBL027 Datasheet HTML 3Page - Tyco Electronics MA4PBL027 Datasheet HTML 4Page - Tyco Electronics MA4PBL027 Datasheet HTML 5Page - Tyco Electronics  
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HMIC Silicon Beamlead PIN Diode
V2
MA4PBL027
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
2
Electrical Specifications at TAMB = 25°C
Notes:
1. Capacitance is determined by measuring the isolation of a single series diode in a 50Ω line at 10GHz.
2. Forward series resistance is determined by measuring the insertion loss of a single series diode in a 50Ω line at
10GHz.
DIM
INCHES
MM
MIN.
MAX.
MIN.
MAX.
A
0.009
0.013
0.2286
0.3302
B
0.0049
0.0089
0.1245
0.2261
C
0.0037
0.0057
0.0940
0.1448
D
0.0049
0.0089
0.1245
0.2261
E
0.002
0.006
0.0508
0.1524
F
0.0218
0.0278
0.5537
0.70612
Test Conditions
Paramters
Units
Min
Typical
Max.
Total Capacitance @ –5V/10 GHz 1
Ct
fF
26
30
Forward Resistance @ +20mA/10 GHz 2
Rs
Ohms
4
4.9
Forward Voltage at +10mA
Vf
Volts
1.2
1.36
1.5
Leakage Current at –40 V
Ir
nA
50
300
Minority Carrier Lifetime
TL
nS
5
10



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