1998 Mar 17

9

Philips Semiconductors

Product specification

7 N-channel 80 m

Ω FET array

enhancement mode MOS transistors

PHN708

Fig.12 Temperature coefficient of gate-source

threshold voltage as a function of junction

temperature; typical values.

k

V

V

--------------------------------------

=

handbook, halfpage

−75

k

1.2

1

0.8

0.6

−25

175

25

75

125

MDA795

Tj (°C)

Fig.13 Temperature coefficient of drain-source

on-resistance as a function of junction

temperature; typical values.

k

R

R

-----------------------------------------

=

handbook, halfpage

−75

k

1.8

1.4

1

0.6

−25

175

25

75

(1)

(2)

125

MDA796

Tj (°C)