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2SC2983 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2983 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor 2SC2983 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA -- -- 1.5 V VBE(on) Base-Emitter On Voltage VCE= 5V; IC= 500mA -- -- 1.0 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IB= 0 160 -- -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 160 -- -- V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 -- -- V ICBO Collector Cutoff Current VCB= 160V; IE= 0 -- -- 1 uA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 -- -- 1 uA hFE DC Current Gain IC= 0.1A; VCE= 5V 70 -- 240 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz -- 25 -- pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V -- 100 -- MHz hFE Classifications O Y 70-140 120-240 |
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