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MRF1570T1 数据表(PDF) 2 Page - Freescale Semiconductor, Inc |
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MRF1570T1 数据表(HTML) 2 Page - Freescale Semiconductor, Inc |
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2 / 20 page ![]() 2 RF Device Data Freescale Semiconductor MRF1570T1 MRF1570FT1 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) IDSS — — 1 μA On Characteristics Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 0.8 mAdc) VGS(th) 1.0 — 3 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — — 1 Vdc Dynamic Characteristics Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss — — 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss — — 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss — — 35 pF RF Characteristics (In Freescale Test Fixture) Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Gps 10 — — dB Drain Efficiency (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz η 50 — — % |
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