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2SA1700-252 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1700-252 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SA1700 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA -0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= -50mA; IB= -5mA 1.0 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 -5 V ICBO Collector Cutoff Current VCB= -300V; IE= 0 -0.1 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 μ A hFE DC Current Gain IC= -50mA; VCE= -10V 60 200 fT Current-Gain—Bandwidth Product IC= -10mA; VCE= -30V 70 MHz hFE Classifications D E 60-120 100-200 |
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