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2SB1202-252 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1202-252 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SB1202 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -100mA -- -- -0.7 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -100mA -- -- -1.2 V V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IB= 0 -60 -- -- V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -50 -- -- V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 -6 -- -- V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -- -- -1 uA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -- -- -1 uA hFE1 DC Current Gain IC= -0.1A; VCE= -2V 100 -- 560 hFE2 DC Current Gain IC= -3A; VCE= -2V 35 -- -- COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz -- 39 -- pF fT Current-Gain—Bandwidth Product IC= -50mA; VCE= -10V -- 150 -- MHz hFE1 Classifications R S T U 100-200 140-280 200-400 280-560 |
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