2SC3072 datasheet(1/2 Pages) ISC

部件名	2SC3072

功能描述	Silicon NPN Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC3072

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 20V(Min)

·

DC Current Gain-

: hFE= 140(Min)@ IC= 0.5A

·

Fast switching speed

·

Large current capacity

APPLICATIONS

·

Power amplifier applications

·

Driver stage amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

5

A

IB

Base current

0.5

A

ICP

Collector Current Pulse

8

A

PC

Total Power Dissipation

@ TC=25℃

10

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SC3072

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC3072	152Kb / 3P	TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
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Toshiba Semiconductor	2SC3072	1Mb / 73P	Bipolar Small-Signal Transistors
Inchange Semiconductor ...	2SC3072	299Kb / 2P	Silicon NPN Power Transistor

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