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2SD1816-252 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1816-252 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor 2SD1816 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA 0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 200mA 1.2 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IB= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 1 uA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 1 uA hFE1 DC Current Gain IC= 0.5A; VCE= 5V 70 400 hFE2 DC Current Gain IC= 3A; VCE= 5V 40 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 40 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 180 MHz hFE-1 Classifications Q R S T 70-140 100-200 140-280 200-400 |
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