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3DA752-252 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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3DA752-252 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon NPN Power Transistor 3DA752 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA 2.0 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA; IB= 0 40 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 0.1 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 μ A hFE DC Current Gain IC= 0.5A; VCE= 2V 100 400 COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz 13 pF fT Current-Gain—Bandwidth Product IC= 500mA; VCE= 5V 120 MHz hFE-1 Classifications O Y G 100-200 160-320 200-400 |
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