M93C86-RBN3P datasheet(10/31 Pages) STMICROELECTRONICS

10 / 31 page

M93C86, M93C76, M93C66, M93C56, M93C46

10/31

Erase

The Erase Byte or Word (ERASE) instruction sets

the bits of the addressed memory byte (or word) to

1. Once the address has been correctly decoded,

the falling edge of the Chip Select Input (S) starts

the self-timed Erase cycle. The completion of the

cycle can be detected by monitoring the Ready/

Busy line, as described in the READY/BUSY STA-

TUS section.

Write

For the Write Data to Memory (WRITE) instruction,

8 or 16 data bits follow the op-code and address

bits. These form the byte or word that is to be writ-

ten. As with the other bits, Serial Data Input (D) is

sampled on the rising edge of Serial Clock (C).

After the last data bit has been sampled,

the Chip

Select Input (S) must be taken Low before the next

rising edge of Serial Clock (C). If Chip Select Input

(S) is brought Low before or after this specific time

frame, the self-timed programming cycle will not

be started, and the addressed location will not be

programmed. The completion of the cycle can be

detected by monitoring the Ready/Busy line, as

described later in this document.

Once the Write cycle has been started, it is inter-

nally self-timed (the external clock signal on Serial

Clock (C) may be stopped or left running after the

start of a Write cycle). The cycle is automatically

preceded by an Erase cycle, so it is unnecessary

to execute an explicit erase instruction before a

Write Data to Memory (WRITE) instruction.

Figure 5. ERASE, ERAL Sequences

Note: For the meanings of An and Xn, please see Table 5., Table 6. and Table 7..

AI00879B

ERASE

1 1

ADDR

CODE

BUSY

READY

CHECK

STATUS

ERASE

ALL

CODE

BUSY

READY

CHECK

STATUS

Xn X0

ADDR

M93C86-RBN3P 数据表(PDF) 10 Page - STMicroelectronics

M93C86-RBN3P 数据表(HTML) 10 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31

数据表下载