MJD44H11 datasheet(1/2 Pages) ISC

部件名	MJD44H11

功能描述	isc Silicon NPN Power Transistors

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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isc Silicon NPN Power Transistors

MJD44H11

DESCRIPTION

·

Low Collector-Emitter Saturation Voltage

: VCE(sat)= 1.0V(Max)@ IC = 8A

·

Fast Switching Speeds

·

Complement to Type MJD45H11

·

DPAK for Surface Mount Applications

APPLICATIONS

·

Designed for general purpose power amplification and

switching such as output or driver stages in applications

such as switching regulators,converters and power amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

ICM

Collector Current-Peak

16

A

PC

Collector Power Dissipation

@TC=25℃

20

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

6.25

℃

/W

类似零件编号 - MJD44H11

制造商	部件名	数据表	功能描述
Motorola, Inc	MJD44H11	192Kb / 6P	SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS 20 WATTS
ON Semiconductor	MJD44H11	192Kb / 6P	SILICON POWER TRANSISTORS August, 2004 ??Rev. 6
STMicroelectronics	MJD44H11	64Kb / 5P	COMPLEMENTARY SILICON PNP TRANSISTORS Jul-1997
Fairchild Semiconductor	MJD44H11	36Kb / 4P	General Purpose Power and Switching Such as Output or Driver Stages in Applications D-PAK for Surface Mount Applications
STMicroelectronics	MJD44H11	152Kb / 5P	COMPLEMENTARY SILICON PNP TRANSISTORS May-2003

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