ISF1180 datasheet(1/2 Pages) ISC

部件名	ISF1180

功能描述	N-Channel MOSFET

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

ISF1180

eq IPB018N10N5

N-Channel MOSFET

www.iscsemi.com

1

FEATURES

·

Low input capacitance and gate charge

·

Low gate input resistance

APPLICATIONS

·

Switching applications

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

100

V

VGSS

Gate-Source Voltage

±

20

V

ID

Drain Current-Continuous@TC=25℃

TC=100℃

176

136

A

IDM

Drain Current-Single Pulsed

704

A

PD

Total Dissipation

375

W

Tch

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth(ch-c)

Channel-to-case thermal resistance

0.4

℃

/W

Rth(ch-a)

Channel-to-ambient thermal resistance

40

℃

/W

2

3

1

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