1

Characteristics

Table 1. Absolute maximum ratings

Symbol

Parameters

Value

Unit

IT(RMS)

RMS on-state current (180° conduction angle)

BTA40, BTA41

Tc = 80 °C

40

A

BTB41

Tc = 95 °C

ITSM

Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C)

tp = 16,7 ms

420

A

tp = 20 ms

400

I2t

I2t value for fusing

tp = 10 ms

1000

A2s

dl/dt

Critical rate of rise of on-state current

IG = 2 x IGT , tr ≤ 100 ns

f = 120 Hz

Tj = 125 °C

50

A/µs

VDSM, VRSM Non repetitive surge peak off-state voltage

tp = 20 ms

Tj = 25 °C

VDRM, VRRM + 100

V

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

8

A

PG(AV)

Average gate power dissipation

Tj = 125 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) - standard (4 quadrants)

Symbol

Parameters

Quadrant

Values

Unit

IGT(1)

VD = 12 V, RL = 33 Ω

I - II - III

IV

Max.

50

100

mA

VGT

I - II - III

Max.

1.3

V

VGD

VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C

I - II - III

Min.

0.2

V

IH(2)

IT = 500 mA

Max.

80

mA

IL

IG = 1.2 IGT

I - III - IV

Max.

70

mA

II

Max.

160

dV/dt(2)

VD = 67 % VDRM gate open, Tj = 125 °C

Min.

500

V/µs

(dV/dt)c(2)

(dI/dt)c = 20 A/ms, Tj = 125 °C

Min.

10

V/µs

1. Minimum IGT is guaranteed at 5 % of IGT max.

2. For both polarities of A2 referenced to A1

Table 3. Static electrical characteristics

Symbol

Test conditions

Tj

Value

Unit

VTM(1)

ITM = 60 A, tp = 380 µs

25 °C

Max.

1.55

V

VTO(1)

threshold on-state voltage

125 °C

Max.

0.85

V

RD(1)

Dynamic resistance

125 °C

Max.

10

mΩ

IDRM/IRRM

VT = VDRM, VT = VRRM

25 °C

Max.

5

µA

125 °C

5

mA

1. For both polarities of A2 referenced to A1

BTA40, BTA41, BTB41

Characteristics

DS2111 - Rev 13

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