Silicon NPN RF Power Transistor

2SC1972

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 17V(Min)

APPLICATIONS

· 10 to 14 Watts Output Power Amplifiers In VHF Band Mobile Radio Applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

17

V

VEBO

Emitter-Base Voltage

4

V

IC

Collector Current-Continuous

3.5

A

PC

Total Power Dissipation@ Ta=25℃

1.5

W

Total Power Dissipation@ TC=25℃

80

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 10mA, IE= 0

35

--

--

V

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA, IB= 0

17

--

--

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10mA, IC= 0

4

--

--

V

ICBO

Collector Cutoff Current

VCB= 25V, IE= 0

--

--

1

mA

IEBO

Emitter Cutoff Current

VEB= 3V, IC= 0

--

--

0.5

mA

hFE

DC Current Gain

IC= 0.1A, VCE= 10V

10

--

180

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 7.2A, IB= 1.8A

--

--

3.0

V