2SC6022-252 datasheet(1/2 Pages) ISC

部件名	2SC6022-252

功能描述	Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

Silicon NPN Power Transistor

2SC6022

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 30V(Min)

·

DC Current Gain-

: hFE= 250(Min)@ IC= 0.5A

APPLICATIONS

·

DC-DC converter,relay drivers,lamp drivers,motor

drivers, inverter

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

9

A

ICM

Collector Current-Peak

12

A

PC

Collector Power Dissipation

1

W

Collector Power Dissipation

@TC= 25℃

15

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SC6022-252

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	2SC6022-251	295Kb / 2P	Silicon NPN Power Transistor

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