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STFV4N150 数据表(PDF) 4 Page - STMicroelectronics

部件名 STFV4N150
功能描述  N-channel 1500V - 5廓 - 4A - TO-220FH Very high voltage PowerMESH??Power MOSFET
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STFV4N150 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STFV4N150
4/13
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS = 0
1500
V
IDSS
Zero gate voltage
Drain current (VGS = 0)
VDS = Max rating
VDS = Max rating,TC = 125°C
10
500
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 30V
± 100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 2A
5
7
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Forward transconductance VDS = 30V , ID = 2A
3.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
1300
120
12
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 600V, ID = 4A,
VGS = 10V
(see Figure 15)
30
10
9
50
nC
nC
nC



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