Features

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Ultra Broad Bandwidth: 50 MHz to 50 GHz

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Functional Bandwidth : 50 MHz to 70 GHz

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Dual shunt diode configuration

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0.35 dB Insertion Loss, 46 dB Isolation at 50 GHz

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Low Current consumption:

-5 V for Low Loss State

+10 mA for Isolation State

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M/A-COM’s unique patent pending AlGaAs

hetero-junction anode technology

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Silicon Nitride Passivation

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Polymide Scratch protection

Description

M/A-COM’s MA4AGSW1 is an Aluminum-Gallium-Arsenide

anode enhanced, SPST PIN diode switch.

AlGaAs anodes,

which

utilize

M/A-COM’s

patent

pending

hetero-junction

technology, produce less diode resistance than conventional GaAs

processes. These devices are fabricated on a OMCVD epitaxial

wafer using a process designed for high device uniformity and

extremely low parasitics. The diodes themselves exhibit low series

resistance, low capacitance, and extremely fast switching speed.

They are fully passivated with silicon nitride and have an

additional layer of a polymer for scratch protection. The protective

coating prevents damage to the junction and the anode air bridges

during handling.

Off-chip bias circuitry is required and allows

maximum design flexibility.

Applications

The low capacitance of the PIN diodes used makes it ideal for use

in microwave and millimeter wave switch designs, where ultra low

insertion loss is required. The very high shunt conductance of the

diodes dramatically improves isolation at millimeter wave

frequencies. These AlGaAs PIN switches are used in switching

arrays for radar systems, high-speed ECM circuits, and millimeter

wave measurement instrumentation.

AlGaAs SPST Reflective

PIN Diode Switch

V 1.00

MA4AGSW1 Layout

Absolute Maximum Ratings

1

@ TA = +25 °C (Unless otherwise

specified)

Parameter

Maximum Rating

Operating Temperature

-55 °C to +125 °C

Storage Temperature

-65 °C to +150 °C

Incident C.W. RF Power

+ 30 dBm @ -5 V

Reverse Voltage

25 V

Bias Current

30 mA per Diode

1. Exceeding any of these values may result in permanent

damage

Nominal Chip Dimensions

Chip Dimensions (

µm)

X

Y

Chip

780

650

Pad Dimensions (

µm)

X

Y

RF

100

100

Pad Locations (

µm)

X

Y

J1

0

0

J2

+530

0

Pad Locations Relative to J1