AlGaAs SP2T PIN Diode Switch

MA4AGSW2

V 1.00

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)

or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

5

Solder Die Attachment

All die attach and bonding methods should be compatible with

gold metal. Solder which does not scavange gold, such as

80Au/20Sn or Sn62/Pb36/Ag2 is recommended. Do not

expose die to a temperature greater than 300 °C for more than

10 seconds.

Electrically Conductive Epoxy

Die Attachment

Assembly can be preheated to approximately 125 °C. Use a

controlled thickness of approximately 2 mils for best electrical

and thermal conductivity. Cure epoxy as per manufacturer’s

schedule. For extended cure times, temperatures should be

kept below 150 °C.

Ribbon/Wire Bonding

Wedge thermocompression bonding or ball bonding may be

used to attach ribbons or wires to the RF bonding pads. Gold

ribbons should be 1/4 x 3 mil sq. for all RF ports for lowest

inductance and best microwave performance.

Assembly Considerations

The following precautions should be observed to avoid

damaging these chips.

Cleanliness

These chips should be handled in a clean environment. Do not

attempt to clean die after installation.

Electro-Static Sensitivity

These Devices are considered ESD Class1. Proper ESD

techniques should be used when handling these devices.

General Handling

The protective polymer coating on the active areas of these die

provides scratch and impact protection, particularly for the

metal airbridge which contacts the diode’s anode. Die should

primarily be handled with vacuum pickups, or alternatively

with plastic tweezers.

Mounting Techniques

These AlGaAs devices are designed to be mounted with

electrically

conductive

silver

epoxy

or

with

a

lower

temperature solder perform, which is not rich in Sn content.

Operation of the MA4AGSW2

The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the

Remaining Isolated Ports achieves operation of the MA4AGSW Series of AlGaAs PIN Switches. The Backside Area of

the Die is the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1. Constant Current

Sources should supply the DC Control Currents. The Diode voltages at these Bias Nodes will not exceed + 1.6 volts

( + 1.4 volts typical for Supply Currents up to + 30 mA). In the Low Loss State, the Series Diode must be Forward

Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased and the

Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF to DC Isolation.

Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return

Path, (J1). A Minimum Value of | -2 V | is recommended at this Return Node, which is achievable with a Standard,

+ 5 V TTL Controlled PIN Diode Driver.