Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT6N03LT

Logic level FET

Fig.5. Typical output characteristics, T

I

Fig.6. Typical on-state resistance, T

R

Fig.7. Typical transfer characteristics.

I

Fig.8. Typical transconductance, T

g

Fig.9. Normalised drain-source on-state resistance.

a = R

Fig.10. Gate threshold voltage.

V

02468

10

0

10

20

30

40

50

60

BUK9830-30

VDS / V

ID / A

2.5

3

3.5

4

4.5

5

10

6

VGS / V =

0

1020

3040

5060

0

10

20

9830-30

ID / A

gfs / S

Tj / C = 25

150

0

102030405060

0

9830-30

ID / A

RDS(ON) / mOhm

10

20

30

40

50

60

VGS / V =

10

6

5

4.5

4

3.5

3

-50

0

50

100

150

0

0.5

1

1.5

2

SOT223 30V Trench

Tj / C

a

Normalised RDS(ON) = f(Tj)

0123

456

0

10

20

30

40

50

60

9830-30

VGS / V

ID / A

Tj / C = 25

150

BUK959-60

-100

-50

0

50

100

150

200

0

0.5

1

1.5

2

2.5

Tj / C

VGS(TO) / V

max.

typ.

min.

January 1998

4

Rev 1.300