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ACST2 数据表(PDF) 2 Page - STMicroelectronics |
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ACST2 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics ACST2 Series 2/11 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) TO-220FPAB Tc = 105° C 2 A DPAK Tc = 110 °C ITSM Non repetitive surge peak on-state current (full cycle sine wave, TJ initial = 25° C) F = 60 Hz t = 16.7 ms 8.4 A F = 50 Hz t = 20 ms 8.0 I²tI²t Value for fusing tp = 10 ms 0.5 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr = 100 ns F = 120 Hz Tj = 125° C 50 A/µs VPP (1) Non repetitive line peak mains voltage (1) Tj = 25° C 2 kV PG(AV) Average gate power dissipation Tj = 125° C 0.1 W PGM Peak gate power dissipation (tp = 20 µs) Tj = 125° C 10 W IGM Peak gate current (tp = 20 µs) Tj = 125° C 1.6 A Tstg Tj Storage junction temperature range Operating junction temperature range -40 to +150 -40 to +125 ° C Tl Maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 ° C 1. according to test described by IEC 61000-4-5 standard and Figure 16 Table 2. Electrical characteristics (Tj = 25° C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit IGT (1) VOUT = 12 V RL = 33 Ω I - II - III MAX 10 mA VGT VOUT = 12 V RL = 33 Ω I - II - III MAX 1.1 V VGD VOUT = VDRM RL = 3.3 kΩ Tj = 125° C I - II - III MIN 0.2 V IH (2) IOUT = 100 mA MAX 10 mA IL IG = 1.2 x IGT I - III MAX 25 mA II MAX 35 dV/dt (2) VOUT = 67% VDRM gate open Tj = 125° C MIN 500 V/µs (dI/dt)c (2) (dV/dt)c = 15 V/µs Tj = 125° C MIN 0.5 A/ms VCL ICL = 0.1 mA tp = 1 ms Tj = 25° C MIN 850 V 1. minimum IGT is guaranteed at 5% of IGT max 2. for both polarity of OUT pin referenced to COM pin |
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