SA SERIES

Taiwan Semiconductor

4

Version: L2105

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

Part Number

Breakdown

voltage

VBR@IT

(V)

(1)

Test

current

IT

(mA)

Working

stand-off

voltage

VWM

(V)

Reverse

leakage

@ VWM

ID

(uA)

Maximum

peak pulse

current

IPPM

(A)

(2)

Maximum

clamping

voltage

VC@IPPM

(V)

Maximum

temperature

coefficient

VBR

IT

VWM

IR

IPPM

VC

VBR

V

mA

V

μA

A

V

mV/°C

Min

Max

SA64

71.1

86.9

1

64

1

4.6

114

86

SA64A

71.1

78.6

1

64

1

5.0

103

76

SA70

77.8

95.1

1

70

1

4.2

125

94

SA70A

77.8

86.0

1

70

1

4.6

113

85

SA75

83.3

102

1

75

1

3.9

134

101

SA75A

83.3

92.1

1

75

1

4.3

121

91

SA78

86.7

103

1

78

1

3.7

139

105

SA78A

86.7

95.8

1

78

1

4.1

126

95

SA85

94.4

115

1

85

1

3.4

151

114

SA85A

94.4

104

1

85

1

3.8

137

103

SA90

100

122

1

90

1

3.2

160

121

SA90A

100

111

1

90

1

3.5

146

110

SA100

111

136

1

100

1

2.9

179

135

SA100A

111

123

1

100

1

3.2

162

123

SA110

122

149

1

110

1

2.6

196

148

SA110A

122

135

1

110

1

2.9

177

133

SA120

133

163

1

120

1

2.4

214

162

SA120A

133

147

1

120

1

2.7

193

146

SA130

144

176

1

130

1

2.2

230

175

SA130A

144

159

1

130

1

2.5

209

158

SA150

167

204

1

150

1

1.9

268

203

SA150A

167

185

1

150

1

2.1

243

184

SA160

178

218

1

160

1

2.0

257

217

SA160A

178

197

1

160

1

2.0

259

196

SA170

189

231

1

170

1

1.7

304

230

SA170A

189

209

1

170

1

0.1

275

208

Notes:

1.

VBR measure after IT applied for 300us, IT = square wave pulse or equivalent.

2.

Surge current waveform per Fig.3 and derate per Fig.2

3.

For bipolar types having VWM of 10 volts and under, the IR limit is doubled.

4.

All terms and symbols are consistent with ANSI/IEEE C62.35.