STPS15H100CB datasheet(2/8 Pages) STMICROELECTRONICS

部件名	STPS15H100CB

功能描述	High voltage power Schottky rectifier

PDF	8 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Characteristics

STPS15H100C

2/8

Characteristics

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.58 x IF(AV) + 0.012 IF

(RMS)

Table 2.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

°C/W

Total

2.4

Rth(c)

Coupling

0.7

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

(1)

Pulse test: tp = 380 µs,

δ < 2%

Reverse leakage current

Tj = 25° C

VR = VRRM

3µA

Tj = 125° C

1.3

VF(1.)

Forward voltage drop

Tj = 25° C

IF = 7.5 A

0.8

Tj = 125° C

IF = 7.5 A

0.62

0.67

Tj = 25° C

IF = 12 A

0.85

Tj = 125° C

IF = 12 A

0.68

0.73

Tj = 25° C

IF = 15 A

0.89

Tj = 125° C

IF = 15 A

0.71

0.76

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