Philips Semiconductors

Product specification

TOPFET dual high side switch

PIP3207-DC

THERMAL CHARACTERISTIC

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Thermal resistance

1

R

th j-mb

Junction to mounting base

per channel

-

2.4

3

K/W

both channels

-

1.2

1.5

K/W

STATIC CHARACTERISTICS

Limits are at -40˚C

≤ T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Clamping voltages

V

BG

Battery to ground

I

45

55

65

V

V

BL

Battery to load per channel

I

50

55

65

V

V

GL

Ground to load

2

I

18

23

28

V

I

25

30

V

Supply voltage

battery to ground

V

BG

Operating range

3

-

5.5

-

35

V

Currents

9 V

≤ V

I

B

Total quiescent current

4

V

-

-

20

µA

T

-

0.1

1

µA

I

L

Off-state load current per

V

--

10

µA

channel

T

-

0.1

1

µA

I

G

Operating current

one channel on

-

1.8

3

mA

both channels on

-

3.6

6

mA

I

L

Nominal load current

5

V

8

-

-

A

R

G

Effective internal ground

I

40

75

100

Ω

resistance

6

Resistances per channel

V

BG

I

L

t

p

7

T

j

R

ON

On-state resistance

9 to 35 V

10 A

300

µs 25˚C

-

30

40

m

Ω

150˚C

-

60

80

m

Ω

R

ON

On-state resistance

5.5 V

5 A

300

µs 25˚C

-

50

60

m

Ω

150˚C

-

100

120

m

Ω

1 Of the output Power MOS transistors.

2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage

is clamped by the device.

3 On-state resistance is increased if the supply voltage is less than 7 V.

4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.

5 Per channel but with both channels conducting. Defined as in ISO 10483-1.

6 Equivalent of the parallel connected resistors for both channels.

7 The supply and input voltage for the R

The specified pulse duration t

September 2001

3

Rev 1.100