Philips Semiconductors

Product specification

TOPFET high side switch

PIP3213-R

SMD version

STATIC CHARACTERISTICS

Limits are at -40˚C

≤ T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Clamping voltages

V

BG

Battery to ground

I

50

55

65

V

V

BL

Battery to load

I

50

55

65

V

-V

LG

Negative load to ground

I

18

23

28

V

-V

LG

Negative load voltage

1

I

25

30

V

Supply voltage

battery to ground

V

BG

Operating range

2

5.5

-

35

V

Currents

9 V

≤ V

I

B

Quiescent current

3

V

-

-

20

µA

T

-

0.1

2

µA

I

L

Off-state load current

4

V

--

20

µA

T

-

0.1

1

µA

I

G

Operating current

5

I

-

2

4

mA

I

L

Nominal load current

6

V

T

18

-

-

A

Resistances

V

BG

I

L

t

p

7

T

mb

R

ON

On-state resistance

9 to 35 V

15 A

300

µs

25˚C

-

15

20

m

Ω

150˚C

-

-

37

m

Ω

R

ON

On-state resistance

6 V

15 A

300

µs

25˚C

-

18

25

m

Ω

150˚C

-

-

45

m

Ω

R

G

Internal ground resistance

I

95

150

190

Ω

1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load.

2 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.

3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load.

4 The measured current is in the load pin only.

5 This is the continuous current drawn from the supply with no load connected, but with the input high.

6 Defined as in ISO 10483-1. For comparison purposes only.

7 The supply and input voltage for the R

The specified pulse duration t

September 2001

3

Rev 1.000