3

600VCoolMOSªCM8PowerTransistor

IPD60R180CM8

Rev.2.1,2024-03-21

Final Data Sheet

1Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

1)

ID

-

-

-

-

18

11

A

TC=25°C

TC=100°C

Pulsed drain current

2)

ID,pulse

-

-

48

A

TC=25°C

Avalanche energy, single pulse

EAS

-

-

28

mJ

ID=2.7A; VDD=50V; see table 10

Avalanche energy, repetitive

EAR

-

-

0.14

mJ

ID=2.7A; VDD=50V; see table 10

Avalanche current, single pulse

IAS

-

-

2.7

A

-

MOSFET dv/dt ruggedness

dv/dt

-

-

120

V/ns

VDS=0...400V

Gate source voltage (static)

VGS

-20

-

20

V

static;

Gate source voltage (dynamic)

VGS

-30

-

30

V

AC (f>1 Hz)

Power dissipation

Ptot

-

-

127

W

TC=25°C

Storage temperature

Tstg

-55

-

150

°C

-

Operating junction temperature

Tj

-55

-

150

°C

-

Extended operating junction

temperature

Tj

150

-

175

°C

≤50 h in the application lifetime

Mounting torque

-

-

-

-

Ncm

-

Continuous diode forward current

IS

-

-

18

A

TC=25°C

Diode pulse current

2)

IS,pulse

-

-

48

A

TC=25°C

Reverse diode dv/dt

3)

dv/dt

-

-

70

V/ns

VDS=0...400V,ISD

≤18A,Tj=25°C

see table 8

Maximum diode commutation speed

diF/dt

-

-

1300

A/µs

VDS=0...400V,ISD

≤18A,Tj=25°C

see table 8

Insulation withstand voltage

VISO

-

-

n.a.

V

Vrms,TC=25°C,t=1min

1) Limited by Tj,max.

2) Pulse width tp limited by Tj,max

3) Identical low side and high side switch with identical RG