Specifications and information are subject to change without notice

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December 2006

ECP052D

½ Watt, High Linearity InGaP HBT Amplifier

Product Features

RoHS-compliant QFN package

Applications

Repeaters

Product Description

The ECP052D is a high dynamic range driver amplifier

in a low-cost surface mount package. The InGaP/GaAs

HBT is able to achieve high performance for various

narrowband-tuned application circuits with up to +44

dBm OIP3 and +28.5 dBm of compressed 1dB power.

It is housed in an industry standard in a lead-free/

green/RoHS-compliant 16-pin 4x4mm QFN surface-

mount package.

All devices are 100% RF and DC

tested.

The ECP052D is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required. An internal active bias allows the

ECP052D to maintain high linearity over temperature

and operate directly off a single +5V supply.

This

combination makes the device an excellent candidate for

transceiver line cards in current and next generation

multi-carrier 3G base stations.

Functional Diagram

Function

Pin No.

Vref

1

RF Input

3

RF Output

10, 11

Vbias

16

GND

Backside Paddle

N/C or GND

2, 4-9, 12-15

Specifications

Parameter

Units Min

Typ

Max

Operational Bandwidth

MHz

800

1000

Test Frequency

MHz

850

Gain

dB

17

Output P1dB

dBm

+28

Output IP3

(2)

dBm

+44

Test Frequency

MHz

900

Gain

dB

15.5

17.8

Input Return Loss

dB

18

Output Return Loss

dB

7

Output P1dB

dBm

+27

+28.7

Output IP3

(2)

dBm

+42.5

+43

IS-95A Channel Power

@ -45 dBc ACPR, 1960 MHz

dBm

+23

Noise Figure

dB

7

Quiescent Current, Icq

mA

200

250

300

Device Voltage, Vcc

V

+5

1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V, in tuned application circuit.

2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 50 mA at P1dB. Pin 1 is used as a

reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 12mA of current when used with a series bias resistor of R1=100Ω. (ie. total device current typically will be 262 mA.)

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85 °C

Storage Temperature

-65 to +150 °C

RF Input Power (continuous)

+22 dBm

Device Voltage

+8 V

Device Current

400 mA

Device Power

2 W

Junction Temperature

+250 °C

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No.

Description

ECP052D-G

½-Watt, High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)

ECP052D-PCB900

900 MHz Evaluation Board

1

2

3

4

12

11

10

9

16

15

14

13

5

6

7

8

N/C

RF OUT

RF OUT

N/C

Vref

N/C

RF IN

N/C