Reflective GaAs SP4T Switch

DC - 4 GHz

SW-243

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V3

2

4,5

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

DC - 0.5 GHz

DC - 1 GHz

DC - 2 GHz

DC - 4 GHz

dB

dB

dB

dB

—

—

—

—

—

—

—

—

0.8

0.9

1.0

1.3

Isolation

DC - 0.5 GHz

DC - 1 GHz

DC - 2 GHz

DC - 4 GHz

dB

dB

dB

dB

35

30

25

20

—

—

—

—

—

—

—

—

VSWR

DC - 0.5 GHz

DC - 1 GHz

DC - 2 GHz

DC - 4 GHz

Ratio

Ratio

Ratio

Ratio

—

—

—

—

—

—

—

—

1.25:1

1.25:1

1.5:1

1.9:1

10% to 90% RF, 90% to 10% RF

nS

—

2

—

50% control to 90% RF, 50% control to 10% RF

nS

—

4

—

In-Band

mV

—

25

—

Input P1dB

0.5 - 4 GHz, 0 / -5 VDC

0.05 GHz, 0 / -5 VDC

0.5 - 4 GHz, 0 / -8 VDC

0.05 GHz, 0 / -8 VDC

dBm

dBm

dBm

dBm

—

—

—

—

26

20

32

23

—

—

—

—

IP2

For two-tone input power up to +13 dBm

0.5 - 4 GHz

0.05 GHz

dBm

dBm

—

—

68

55

—

—

IP3

For two-tone input power up to +13 dBm

0.5 - 4 GHz

0.05 GHz

dBm

dBm

—

—

46

37

—

—

Control Current

│Vc│ = 0 to 0.2 V

│Vc│= 5 V

│Vc│= 8 V

µA

µA

µA

—

—

—

—

10

—

5

—

100

4. See MIL-STD-883 for environmental screening options.

5. Faster switching speed can be achieved with enhanced driver waveform.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

6. 0 = 0 V to -0.2 V, 1 = -5 V to -8 V

7. When an RF output port is “off” it is shorted to ground

through an “on” shunt MESFET.

Control Input

Condition of Switch,

RF Common to each

RF Port

A1 B1 A2 B2 A3 B3 A4 B4 RF1 RF2 RF3 RF4

1

0

0

1

0

1

0

1

On

Off

Off

Off

0

1

1

0

0

1

0

1

Off

On

Off

Off

0

1

0

1

1

0

0

1

Off

Off

On

Off

0

1

0

1

0

1

1

0

Off

Off

Off

On