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IXFX64N60P3 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 IXFX64N60P3
功能描述  isc N-Channel MOSFET Transistor
PDF  8 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

IXFX64N60P3 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
IXFX64N60P3
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =1mA
600
-
-
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID = 4mA
3.0
-
5.0
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID= 32A
-
-
100
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
-
-
±200
nA
IDSS
Drain-Source Leakage Current
VDS= 600V; VGS= 0V
-
-
25
μ
A
Gfs
Forward Transconductance
VDS = 20V, ID = 32A
40
-
-
S
Ciss
Input Capacitance
VGS = 0V,
VDS = 25V,
f = 1.0MHz
-
12000
-
pF
Coss
Output Capacitance
-
80
-
Crss
Reverse Transfer Capacitance
-
1150
-
Qg
Total Gate Charge
VDD = 300V,
ID = 32A,
VGS = 10V
-
200
-
nC
Qgs
Gate-Source Charge
-
70
-
Qgd
Gate-Drain Charge
-
68
-
td(on)
Turn-on Delay Time
VDD = 300V,
ID = 32A,
RG = 1.0Ω,
VGS = 10V
-
28
-
ns
tr
Turn-on Rise Time
-
25
-
td(off)
Turn-off Delay Time
-
80
-
tf
Turn-off Fall Time
-
25
-



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