1999 Apr 22

2

Philips Semiconductors

Product specification

NPN switching transistor

PMST2369

FEATURES

• Low current (max. 200 mA)

• Low voltage (max. 15 V).

APPLICATIONS

• High-speed switching applications, primarily in portable

and consumer equipment.

DESCRIPTION

NPN switching transistor in a SOT323 plastic package.

MARKING

Note

1.

∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

PMST2369

∗1J

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT323) and symbol.

handbook, halfpage

2

3

1

MAM062

3

2

1

Top view

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

15

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

200

mA

peak collector current

−

300

mA

peak base current

−

100

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C