ISG2085

eq STGD5H60DF

Trench Field-stop IGBT

www.iscsemi.com

2

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case IGBT

0.61

℃

/W

Rth j-c

Thermal Resistance,Junction to Case Diode

0.61

℃

/W

STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

VCES

Collector-Emitter Breakdown Voltage VGE=0, IC= 0.5mA

1400

--

--

V

VGE(th)

Gate-Emitter Threshold Voltage

VGE= VCE, IC= 0.34mA

4.0

--

6.2

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 25A, VGE= 15V

--

--

1.9

V

IC= 20A,VGE=15V

--

--

1.75

ICES

Zero Gate Voltage Collector Current

VCE= 1400V, VGE=0

--

--

100

uA

IGES

Gate-Emitter Leakage Current

VGE=±20V, VCE=0

--

--

±

100

nA

VF

Diode forward voltage

IF= 25A

1.9

V

IF= 20A

1.8

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

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