PRF949 datasheet(2/7 Pages) PHILIPS

2 / 7 page

1999 Oct 29

Philips Semiconductors

Preliminary specification

UHF wideband transistor

PRF949

FEATURES

• Small size

• Low noise

• Low distortion

• High gain

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Communication and instrumentation systems.

DESCRIPTION

Silicon NPN transistor in a surface mount 3-pin SOT416

(SC75) package. The transistor is primarily intended for

wideband applications in the GHz-range in the RF front

end of analog and digital cellular telephones, cordless

phones, radar detectors, pagers and satellite TV-tuners.

PINNING SOT416 (SC75)

DESCRIPTION

1base

emitter

collector

handbook, halfpage

MAM337

Fig.1 Simplified outline (SOT416).

Marking code: V0

QUICK REFERENCE DATA

Note

Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Cre

feedback capacitance

IC =0; VCB =6V; f=1MHz

−

0.3

tbf

transition frequency

IC =15mA; VCE =6 V; fm =1GHz

−

GHz

GUM

maximum unilateral power gain

IC =15mA; VCE =6 V;

Tamb =25

°C; f = 1 GHz

−

noise figure

ΓS = Γopt; IC =5mA; VCE =6 V;

f=1GHz

−

1.5

2.5

Ptot

total power dissipation

Ts =90

°C; note 1

−−

180

Rth j-s

thermal resistance from junction

to soldering point

Ptot = 180 mW

−−

335

K/W

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