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33389 数据表(PDF) 21 Page - Freescale Semiconductor, Inc |
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33389 数据表(HTML) 21 Page - Freescale Semiconductor, Inc |
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21 / 49 page ![]() Analog Integrated Circuit Device Data Freescale Semiconductor 21 33389 FUNCTIONAL DEVICE OPERATION Figure 6. HSOP-20 Simplified Thermal Model Example Assuming IV1 = 100 mA at VBAT = 16 V, IV2 =150 mA at VBAT = 16 V (Excluding CAN consumption). ICAN = 50 mA at VBAT =16 V, we have: PV1 = 1. 1 W, PV2 = 1.65 W, PCAN = 0.55 W System assumptions: If TAMB= 85°C and RTHC/A = 18°C/W, this gives: TCASE = TAMB+RTHC/A x 3.3 W = 85 + 18 x 3.3 = 145°C and TJV1 = TJV2 = TJCAN=155°C. This example represents the limit for the maximum power dissipation with a HSOP20. SO28WB Package The case (pin) to junction RTH is represented here by only one thermal resistance for the total power because the three power sources strongly interact on the silicon for such a package. Figure 7. SO28WB Simplified Thermal Model Example Assuming IV1 = 45 mA at VBAT = 16 V, IV2 = 45 mA at VBAT = 16 V (Excluding CAN consumption). ICAN = 50 mA at VBAT = 16 V, we have: PV1 = 0.5 W, PV2 =0.5 W, PCAN =0.55 W thus PTOTAL =1.55W System assumptions: If TAMB = 85°C and RTHC/A = 25°C/W, this gives: TCASE = TAMB + RTHC/A x 1.55 W = 85+25 x 1.55 = 124°C and TJV1 = 124 + 20 x 1.55 = 155°C. DIFFERENT DEVICE VERSIONS The MC33389 is proposed in several package versions, and also offers slight differences in term of functionalities. The device version is identified in the device part number by the first letter after the 389 number. The package identification is done by the last two letters of the part number (DW for SO28 wide body, DH for power SO20). T ambient T case (Heatsink) V1 Power V2 Power CAN Power TJ (Max 155°C) RTHJ/C=18°C/W 6.5°C/W 9°C/W RTHC/A (ECU supplier dependent) TCASE (pin) TJ (Max 155°C) Total Power RTHC/A TAMBIENT RTHJ/C = 20°C/W |
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