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PUMB2 数据表(PDF) 3 Page - NXP Semiconductors |
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PUMB2 数据表(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1999 Aug 03 3 Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB2 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Refer to SC-88 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO collector-base voltage open emitter −−50 V VCEO collector-emitter voltage open base −−50 V VEBO emitter-base voltage open collector −−10 V VI input voltage positive − +10 V negative −−40 V IO output current (DC) −−100 mA ICM peak collector current −−100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 300 mW |
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