IRF7204 datasheet(2/7 Pages) EVVOSEMI

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Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=-250μA

-30

-33

Zero Gate Voltage Drain Current

IDSS

VDS=-24V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.8 -1.2

-2.0

Drain-Source On-State Resistance

RDS(ON)

VGS=-10V, ID=-5.1A

mΩ

VGS=-4.5V, ID=-4.2A

mΩ

Forward Transconductance

gFS

VDS=-15V,ID=-4.5A

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=-15V,VGS=0V,

F=1.0MHz

520

Output Capacitance

Coss

130

Reverse Transfer Capacitance

Crss

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=-15V, ID=-1A, VGS=-

10V,RGEN=6Ω

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

Total Gate Charge

VDS=-15V,ID=-5.1A,VGS=-

10V

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=-5.1A

-1.2

-30V P - Channel Enhancement Mode MOSFET

IRF7204

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