SA1920 datasheet(9/36 Pages) PHILIPS

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Philips Semiconductors

Product specification

SA1920

Dual-band RF front-end

1999 Mar 02

AC ELECTRICAL CHARACTERISTICS

High-Band, Single Mode of Operation

LNA and Image Reject Mixer

VCC = +3.75 V, FreqRF = 1960 MHz, FreqLO = 2070.52 MHz, Pin = –3 dBm, TA = +25_C; unless otherwise stated

PARAMETERS

MIN

–3

TYP.

MAX

UNITS

NOTES

RF Input Frequency Range

1805

1990

MHz

IF Frequency

100

110.52

125

MHz

LO Frequency

1905

2115

MHz

Power Gain

23.5

Power Gain Reduction (Strong Signal Mode—LNA Off)

Noise Figure

4.0

4.2

4.4

Input Impedance, RF Port

Return Loss at Inputs

–10

LO leakage at RF Port

–48

dBm

1 dB RF Input Compression Point

–24

dBm

IP3 (3RD Order Intermodulation Product)

Referred to the RF Input Port

–15

–12.5

–10

dBm

(2 x LO) – (2 x RF) Spur Performance

–50 dBm IN Referred to RF Input Port

–65

dBc

50 dBm IN Referred to RF In ut Port

Measure at LO = 2040 MHz and RF = 1985 MHz

(3 x LO) – (3 x RF) Spur Performance.

–50 dBm IN Referred to RF Input Port.

Measure at LO = 2040 MHz and RF = 2003 MHz.

–62.5

dBc

Image rejection, fRX+2fIF or fRX –2fIF

Referred to the RF Input Port

LO Input Power

–5

–3

–1

dBm

Turn ON/OFF Time

msec

High-Band LO Buffer

PARAMETERS

MIN

–3

TYP.

MAX

UNITS

NOTES

LO Frequency Range

1905

2115

MHz

Differential Output Power

–9

dBm

Differential Output Impedance

100

Harmonic Content

–20

dBc

Input Power

–5

–3

–1

dBm

Input Impedance

Turn On/Off Time

msec

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