BAP70AM_1

© NXP B.V. 2006. All rights reserved.

Product data sheet

Rev. 01 — 20 November 2006

2 of 7

NXP Semiconductors

BAP70AM

Silicon PIN diode array

4.

Marking

5.

Limiting values

6.

Thermal characteristics

Table 3.

Marking

Type number

Marking code

BAP70AM

N9

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

reverse voltage

-

50

V

forward current

-

100

mA

total power dissipation

-

300

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to solder point

260

K/W