Alternative Device Available

K817P

www.vishay.com

Vishay Semiconductors

Rev. 2.1, 23-May-13

1

Document Number: 83522

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Optocoupler, Phototransistor Output

DESCRIPTION

In the K817P part each channel consists of a phototransistor

optically coupled to a gallium arsenide infrared-emitting

diode in a 4 pin (single) plastic dual inline package.

AGENCY APPROVALS

• BSI: EN 60065:2002, EN 60950-1:2006

• DIN EN 60747-5-2 (VDE 0884)

•FIMKO

• UL file no. E52744

• cUL tested to CSA 22.2 bulletin 5A

FEATURES

• Endstackable to 2.54 mm (0.1") spacing

• DC isolation test voltage 5000 VRMS

• Current transfer ratio (CTR) selected into

groups

• Low temperature coefficient of CTR

• Wide ambient temperature range

• Available in single, dual and quad channel packages

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Programmable logic controllers

•Modems

• Answering machines

• General applications







17203-5

CE

1

AC

C

17918_13

ORDERING INFORMATION

K8

1

7

P

#

x

PART NUMBER

PACKAGE

OPTION

AGENCY CERTIFIED/



PACKAGE

CTR (%)

5 mA

10 mA

5 mA

VDE, BSI, FIMKO,



UL, cUL

50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400

DIP-4

K817P

K817P1

K817P2

K817P3

K817P4

K817P5

K817P6

K817P7

K817P8

K817P9

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

VR

6V

Forward current

IF

60

mA

Forward surge current

tp  10 μs

IFSM

1.5

A

Power dissipation

Pdiss

70

mW

Junction temperature

Tj

125

°C

OUTPUT

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7V

Collector current

IC

50

mA

Collector peak current

tp/T = 0.5, tp  10 ms

ICM

100

mA

Power dissipation

Pdiss

70

mW

Junction temperature

Tj

125

°C

7.62 mm

DIP