N-Channel Enhancement Mode Power MOSFET

General Features

VDS = 60V,ID = 0.34A

RDS(ON) < 5.3Ω @ VGS=4.5V,I D = 200 mA

RDS(ON) < 5.0Ω @ VGS=10V ,ID = 500mA

ESD Rating

HBM

1000V

High power and current handing capability

Lead free product is acquired

Surface mount package

Application

Direct logic-level interface: TTL/CMOS

Drivers: relays, solenoids, lamps, hammers,display,

memories, transistors, etc.

Battery operated systems

Solid-state relays

Schematic diagram

Marking and pin assignment

SOT-23 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

72K

2N7002KB

SOT-23

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (TA=25

unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

0.34

Continuous Drain Current

ID

A

Maximum Power Dissipation

PD

0.35

W

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

2N7002KBV

72K

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:2N7002KBV

2020-11/03

REV:O