IRFP4228PBF datasheet(6/8 Pages) IRF

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IRFP4228PbF

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Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

V(BR)DSS

IAS

0.01

Ω

D.U.T

VDS

- VDD

DRIVER

15V

20V

VGS

Fig 20a. Gate Charge Test Circuit

Fig 20b. Gate Charge Waveform

Vds

Vgs

Vgs(th)

Qgs1 Qgs2

Qgd

Qgodr

D.U.T.

VDS

3mA

VGS

µF

50K

Ω

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

Fig 18.

Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

*** VGS = 5V for Logic Level Devices

***

VDD

• dv/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

IRFP4228PBF 数据表(PDF) 6 Page - International Rectifier

IRFP4228PBF 数据表(HTML) 6 Page - International Rectifier

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