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BFG310 数据表(PDF) 1 Page - NXP Semiconductors |
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BFG310 数据表(HTML) 1 Page - NXP Semiconductors |
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1 / 12 page ![]() 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package. 1.2 Features s High power gain s Low noise figure s High transition frequency s Gold metallization ensures excellent reliability 1.3 Applications s Intended for Radio Frequency (RF) front end applications in the GHz range, such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVision (SATV) tuners x repeater amplifiers in fiber-optic systems 1.4 Quick reference data BFG310/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 15 V VCEO collector-emitter voltage open base - - 6 V IC collector current (DC) - - 10 mA Ptot total power dissipation Tsp ≤ 145 °C [1] --60 mW hFE DC current gain IC = 5 mA; VCE =3V; Tj =25 °C 60 100 200 CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF fT transition frequency IC = 5 mA; VCE =3V; f = 1 GHz; Tamb =25 °C - 14 - GHz |
类似零件编号 - BFG310 |
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类似说明 - BFG310 |
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