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IRG4PC30KPBF 数据表(PDF) 2 Page - International Rectifier |
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IRG4PC30KPBF 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PC30KPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 67 100 IC = 16A Qge Gate - Emitter Charge (turn-on) 11 16 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) 25 37 VGE = 15V td(on) Turn-On Delay Time 26 tr Rise Time 28 TJ = 25°C td(off) Turn-Off Delay Time 130 200 IC = 16A, VCC = 480V tf Fall Time 120 170 VGE = 15V, RG = 23Ω Eon Turn-On Switching Loss 0.36 Energy losses include "tail" Eoff Turn-Off Switching Loss 0.51 mJ See Fig. 9,10,14 Ets Total Switching Loss 0.87 1.3 tsc Short Circuit Withstand Time 10 µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 23Ω , VCPK < 500V td(on) Turn-On Delay Time 25 TJ = 150°C, tr Rise Time 29 IC = 16A, VCC = 480V td(off) Turn-Off Delay Time 190 VGE = 15V, RG = 23Ω tf Fall Time 190 Energy losses include "tail" Ets Total Switching Loss 1.2 mJ See Fig. 11,14 Eon Turn-On Switching Loss 0.26 TJ = 25°C, VGE = 15V, RG = 23Ω Eoff Turn-Off Switching Loss 0.36 IC = 14A, VCC = 480V Ets Total Switching Loss 0.62 Energy losses include "tail" LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 920 VGE = 0V Coes Output Capacitance 110 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 27 = 1.0MHz Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A D V(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage 0.54 V/°C VGE = 0V, IC = 1.0mA 2.21 IC = 14A 2.21 2.7 IC = 16A VGE = 15V 2.88 IC = 28A See Fig.2, 5 2.36 IC = 16A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA D VGE(th)/DTJ Temperature Coeff. of Threshold Voltage -12 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
5.4 8.1 S VCE = 100V, IC = 16A 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C 1100 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V VCE(ON) Collector-to-Emitter Saturation Voltage Details of note through
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