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SA7016 数据表(PDF) 4 Page - NXP Semiconductors |
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SA7016 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 18 page ![]() Philips Semiconductors Product specification SA7016 1.3GHz low voltage fractional-N synthesizer 1999 Nov 04 4 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VDD Digital supply voltage –0.3 +5.5 V VDDCP Analog supply voltage –0.3 +5.5 V ∆VDDCP–VDD Difference in voltage between VDDCP and VDD (VDDCP ≥ VDD) –0.3 +2.8 V Vn Voltage at pins 1, 2, 5, 6, 11 to 16 –0.3 VDD + 0.3 V V1 Voltage at pin 8, 9 –0.3 VDDCP+ 0.3 V ∆VGND Difference in voltage between GNDCP and GND (these pins should be connected together) –0.3 +0.3 V Tstg Storage temperature –55 +125 _C Tamb Operating ambient temperature –40 +85 _C Tj Maximum junction temperature 150 _C Handling Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take normal precautions appropriate to handling MOS devices. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j–a Thermal resistance from junction to ambient in free air 120 K/W |
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